Under radiation environment, conventional SRAMs suffer from high soft-error rate. To address this challenge, several radiation hardened SRAM cells such as 16T-Dice and 10T-Quatro have been developed. Here, Quatro is the most promising since this cell delivers robust operation while incurring moderate area overhead. However, our study shows that Quatro experiences poor writability under parametric variations of scaled technologies. In this work, we present a 12T SRAM cell, named as we-Quatro. In spite of using more transistors, the proposed cell occupies perfectly same cell area as Quatro. Our extensive simulations show that the proposed cell obtains good writability and delivers almost comparable soft-error resilience to Quatro in 28nm FD-SOI technology, validating the efficacy of our proposed we-Quatro.
Our we-Quatro has almost comparable soft-error resilience to Quatro. Compared to 6T SRAM, both Quatro and we-Quatro are much more immune to soft-error.
In this paper, we proposed a new radiation-hardened SRAM cell, named as we-Quatro. Original Quatro suffer from poor writability under parametric process variations of scaled technologies. By employing two more access transistors, we efficiently address this challenge. We exploit the characteristics of the thin-cell type layout of Quatro. Hence, in spite of adding more transistors, the cell area of we-Quatro is same as that of Quatro. We make extensive simulation to show the efficacy of our we-Quatro. The results show that under parametric variations of 28nm FD-SOI technology, our we-Quatro provides more reliable operation compared to Quatro.